Polarization conversion effect in obliquely deposited SiOx films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117749
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Polarization conversion effect in obliquely deposited SiOx films / M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 273-278. — Бібліогр.: 21 назв. — англ.

Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ell...