Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Цитувати: | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859650227418431488 |
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| author | Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. |
| author_facet | Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. |
| citation_txt | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.
|
| first_indexed | 2025-12-07T13:32:36Z |
| format | Article |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 3. P. 287-293.
PACS 77.80.Bh, 78.40.Ha
Optical absorption edge and luminescence
in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals
I.P. Studenyak1, V.Yu. Izai1, V.О. Stephanovich1, V.V. Panko1, P. Kúš2, A. Plecenik2,
M. Zahoran2, J. Greguš2, T. Roch2
1Uzhhorod National University, Physics Faculty,
46, Pidhirna str. 88000 Uzhhorod, Ukraine
2Comenius University, Faculty of Mathematics, Physics and Informatics,
Mlynska dolina, 84248 Bratislava, Slovakia
E-mail:studenyak@dr.com
Abstract. Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for
different values of fluence with using P+ ions; the energy of ions was 150 keV. For the
implanted Cu6PS5X crystals, the structural studies were performed using the scanning
electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric
studies of optical absorption edge and luminescence were carried out within the
temperature range 77…320 K. The influence of ionic implantation on luminescence
spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction
as well as ordering-disordering processes in Cu6PS5X (X = I, Br) superionic conductors
have been studied.
Keywords: superionic crystal, implantation, absorption edge, Urbach rule, exciton-
phonon interaction, luminescence.
Manuscript received 07.07.11; accepted for publication 14.09.11; published online 21.09.11.
1. Introduction
Cu6PS5X compounds with argyrodite structure are
characterized by high ionic conductivity and well known
as ferroelastic and nonlinear optical materials [1]. They
are promising materials for creation of solid electrolyte
power sources, electrochemical and optical sensors [2].
At room temperature, they belong to the cubic syngony
mF 34 [1, 3]. The specific features of Cu6PS5X crystal
structure and phase transitions are studied in [ 41− ].
It should be noted that the electrical, acoustic,
calorimetric and some optical properties of Cu6PS5X
compound have been studied quite extensively [2, 5-7].
Near the optical absorption edge in Cu6PS5X crystals,
the excitonic bands are revealed, which are smeared with
temperature increase and Urbach behaviour of
absorption edge is observed [2]. In the luminescence
spectra of Cu6PS5X crystals at low temperatures, the
excitonic and impurity-related bands are observed; with
temperature increase the noticeable temperature
quenching takes place [8].
This paper is aimed at the optical absorption and
luminescence studies of implanted Cu6PS5X superionic
crystals as well as the influence of implantation on
Urbach parameters, parameters of exciton-phonon
interaction and ordering-disordering processes.
2. Experimental
Cu6PS5X single crystals were grown using chemical
vapour transport [2]. Implantation of Cu6PS5X crystals
with P+ ions was performed using an experimental set-up
with magnetic separation and variable accelerating
voltage [9]: the energy of ions was 150 keV, the angle of
incidence was 10°.
For the implanted Cu6PS5X crystals, the structural
studies were performed using scanning electron
microscopy technique (Hitachi S-4300) and energy-
dispersive X-ray spectroscopy. It was shown that on the
surface of implanted Cu6PS5X crystals the darkened
areas with linear size of 100 up to 200 nm are created,
and their amount increases with fluence. Phosphorous
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
287
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 3. P. 287-293.
implantation does not lead to the remarkable changes in
chemical composition of Cu6PS5X crystals.
Spectrometric studies of optical absorption edge
and luminescence were carried out within the
temperature range 77 to 320 K using LOMO KSVU-23
grating monochromator; for the luminescence studies the
532-nm laser light was used as the excitation source [2,
8]. During the measurements, the samples were oriented
at room temperature while being in the cubic phase. For
low temperature studies cryostat of UTREX type was
used, stability and accuracy of temperature
measurements were ±0.5 K. The relative error in
determination of the absorption coefficient Δα/α did not
exceed 10% at 0.3 ≤ αd ≤ 3 [2].
3. Results and discussion
Fig. 1 presents spectral dependences of the absorption
coefficient for unimplanted and implanted Cu6PS5X
crystals at 300 K for various fluences. It is shown that
the optical absorption edge for both unimplanted and
implanted Cu6PS5X crystals has an exponential shape.
The inset (Fig. 1) shows the dependences of such
parameters of the absorption edge as optical pseudogap
( is the absorption edge energy position at the
fixed value of the absorption coefficient )
and the Urbach energy ( is the energy width of
the exponential absorption edge) on the fluence. It has
been revealed for Cu
*
gE *
gE
13 cm10 −=α
UE UE
6PS5X crystals that *
gE ve lightly
changes with the fluence increase (for Cu
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
ry s
6PS5I crystals
the tendency of the slight nonlinearly decreasing is
observed, as well as for Cu6PS5I crystal, contrary, the
tendency of the slight nonlinearly increasing is
observed). With fluence increase, the Urbach energy
in Cu
UE
6PS5X crystal slightly increases as compared to the
unimplanted crystals (by 4-5%), and then decreases (by
6%) for Cu6PS5I crystals and increases (by 17%) for
Cu6PS5Br crystals. The latter is the evidence for
structural ordering in Cu6PS5I crystals, which increases
at ion implantation, while in Cu6PS5Br crystals the
structural disordering of crystal lattice with implantation
is observed.
The temperature studies of optical absorption edge
have shown that the temperature behaviour of
exponential parts at the absorption edge in unimplanted
and implanted Cu6PS5X crystals for T > ТІ follows the
Urbach rule [10]:
⎥
⎦
⎤
⎢
⎣
⎡ −ν
⋅α=⎥⎦
⎤
⎢⎣
⎡ −νσ
⋅α=να
)(
exp
)(
exp),( 0
0
0
0 TE
Eh
kT
Eh
Th
U
,
(1)
where is the steepness parameter, and are the
convergence point coordinates of the Urbach bundle,
σ 0α 0E
νh
is the photon energy. Fig. 2 presents spectral
dependences of the absorption coefficient at various
temperatures for the implanted Cu6PS5I (by the fluence
1×1015 ions/cm2) and Cu6PS5Br (by the fluence
1×1013 ions/cm2) crystals. It should be noted that the
similar Urbach bundles are observed for all the
implanted Cu6PS5X crystals. The coordinates of the
Urbach bundle convergence point and for the
implanted crystals at various fluence values are given in
Tables 1 and 2. For comparison, Tables 1 and 2 contain
corresponding parameters for the unimplanted Cu
0α 0E
6PS5X
crystal.
The exponential shape of the absorption edge
longwave side is usually related to exciton-phonon
interaction (EPI) [11]. Within the whole investigated
temperature interval, for all the implanted Cu6PS5X
crystals (Fig. 2), the temperature dependences of the
absorption edge steepness parameter , where
k is the Boltzmann constant, T is temperature, are
described by the Mahr relation [11]:
UEkT /=σ
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛ ω
⋅⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
ω
⋅σ=σ
kT
kTT p
p 2
th2)( 0
h
h
, (2)
a
b
Fig. 1. Spectral dependences of the absorption coefficient for
unimplanted and implanted Cu6PS5I (a) and Cu6PS5Br (b)
crystals at T = 300 K and various fluences: (1) unimplanted
crystal, (2) 1×1012 and (3) 1×1014 ions/cm2. The inset shows
dependences of the optical pseudogap (1) and Urbach
energy (2) on fluence for implanted Cu
*
gE
UE 6PS5I and
Cu6PS5Br crystals.
288
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 3. P. 287-293.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Table 1. Parameters of the Urbach absorption edge and parameters of exciton-phonon interaction for unimplanted and
phosphorous-implanted Cu6PS5I crystals.
Crystal
Cu6PS5I
Unimplanted 1×1011
ions/cm2
1×1012
ions/cm2
1×1013
ions/cm2
1×1014
ions/cm2
1×1015
ions/cm2
where the σ0 parameter is a constant independent of
temperature and related to the EPI constant g as
σ0 = 2/3g; is the effective average phonon energy
in a single-oscillator model, describing the EPI [11]. The
values of the effective phonon energy taking part
in formation of the absorption edge, and the σ
pωh
pωh
0
parameter are given in Tables 1 and 2. It should be noted
that for the implanted Cu6PS5X crystals, like for the
unimplanted one, the value σ0 is higher than unity
(except for Cu6PS5Br crystal at the fluence
1×1015 ions/cm2), which indicates weak EPI [12]. The
dependences of the EPI parameter σ0 and the effective
average phonon energy pωh on fluence for the
implanted Cu6PS5X crystals are presented in Fig. 3,
besides their behaviour is opposite for Cu6PS5I and
Cu6PS5Br crystals. Thus, for Cu6PS5I crystals with
increase of fluence the σ0 parameter increases by 10%
and at fluences higher than 1×1012 ions/cm2 obtains the
constant value, while the effective phonon energy pωh
at this fluence has its maximum. In the implanted
Cu6PS5Br crystals, the σ0 parameter with fluence
nonlinearly decreases by 11%, while the effective
phonon energy pωh at fluence of 1×1013 ions/cm2 has
its minimum.
The temperature dependences of the optical
pseudogap and the Urbach energy for Cu*
gE UE 6PS5I
crystal implanted at the fluence of 1×1015 ions/cm2 as
well as for Cu6PS5Br crystal implanted at the fluence of
*
gE (300K) (eV) 2.0892 2.0874 2.0864 2.0875 2.0878 2.0876
UE (300K) (meV) 19.7 20.4 19.4 19.2 19.0 18.5
0α (cm-1) 4.7×105 4.3×105 6.9×105 6.3×105 5.8×105 5.7×105
0E (eV) 2.211 2.211 2.213 2.211 2.209 2.204
0σ 1.36 1.32 1.45 1.45 1.45 1.45
pωh (meV) 17.1 18.6 25.0 21.5 18.9 18.5
Eθ (K) 198 216 290 250 251 215
( )0UE (meV) 6.4 7.0 8.6 8.4 7.6 6.3
( )1UE (meV) 12.8 14.1 17.2 16.8 14.7 12.7
*
gE (0) (eV) 2.179 2.172 2.168 2.170 2.172 2.175
*
gS 2.5 4.8 5.4 5.2 5.1 4.9
Table 2. Parameters of the Urbach absorption edge and parameters of exciton-phonon interaction for unimplanted and
phosphorous-implanted Cu6PS5Br crystals.
Crystal
Cu6PS5Br Unimplanted 1×1011
ions/cm2
1×1012
ions/cm2
1×1013
ions/cm2
1×1014
ions/cm2
1×1015
ions/cm2
*
gE (300K) (eV) 2.2975 2.2967 2.2972 2.3013 2.3002 2.3028
UE (300K) (meV) 24.9 26.1 25.3 25.4 26.8 29.2
0α (cm-1) 3.6×105 3.5×105 3.5×105 3.7×105 3.7×105 3.8×105
0E (eV) 2.446 2.450 2.447 2.451 2.461 2.478
0σ 1.12 1.10 1.09 1.08 1.06 1.00
pωh (meV) 26.1 30.4 23.9 22.5 28.1 32.1
Eθ (K) 303 353 277 261 326 372
( )0UE (meV) 11.7 14.1 10.7 10.2 13.1 16.2
( )1UE (meV) 23.1 26.9 22.2 21.1 27.0 31.8
*
gE (0) (eV) 2.391 2.395 2.420 2.400 2.391 2.394
*
gS 6.23 7.26 7.92 6.07 6.32 6.97
289
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 3. P. 287-293.
a b
Fig. 2. Spectral dependences of the absorption coefficient for Cu6PS5I (a) and Cu6PS5Br (b) crystals, implanted by the fluence
1×1015 (a) and 1×1013 ions/cm2 (b), at various temperatures: (1) 170, (2) 200, (3) 230, (4) 280, (5) 300, and (6) 320 K. The inset
shows the temperature dependence of the steepness parameter σ.
a b
Fig. 3. Dependences of the σ0 parameter (1) and energy of effective phonons pωh (2) on the fluence for the implanted Cu6PS5I (a)
and Cu6PS5Br (b) crystals.
1×1013 ions/cm2 are presented in Fig. 4. It should be
noted that the temperature behaviour of and for
all the implanted Cu
*
gE UE
6PS5X (X = I, Br) crystals are well
described in the Einstein model by equations [13, 14]:
⎥
⎦
⎤
⎢
⎣
⎡
−
−=
1)/θ(exp
1θ)0()( ***
T
kSETE
E
Eggg , (3)
⎥
⎦
⎤
⎢
⎣
⎡
−
+=
1)/θ(exp
1)()()( 10 T
EEE
E
UUU , (4)
where and are the energy gap at 0 K and a
dimensionless constant, respectively; is the Einstein
temperature, corresponding to the average frequency of
phonon excitations of a system of non-coupled
oscillators; and are constants. The
performed calculations show that within the whole
temperature range the experimental values of and
are well described by Eqs. (3) and (4). The obtained
, ,
)0(*
gE *
gS
Eθ
0)( UE 1)( UE
*
gE
UE
)0(*
gE *
gS Eθ , and parameters for the
unimplanted and implanted (with various fluences)
crystals are given in Tables 1 and 2. The temperature
dependences of the optical pseudogap and Urbach
energy for Cu
0)( UE 1)( UE
*
gE
UE 6PS5I crystal implanted with the
fluence of 1×1015 ions/cm2 as well as for Cu6PS5Br
crystal implanted with the fluence of 1×1013 ions/cm2,
calculated from Eqs. (3) and (4), are shown in Fig. 4 as
solid and dashed lines.
It should be noted that the Urbach absorption edge
shape is determined by the temperature-related and
structural disordering of crystal lattice, and Urbach
energy is described by the equation [15] UE
,)()(
)()()(
,, dynXUstatXU
TUXUTUU
EE
EEEE
++
+=+=
(5)
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
290
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 3. P. 287-293.
a b
Fig. 4. Temperature dependences of the optical pseudogap (1) and Urbach energy (2) for Cu*
gE UE 6PS5I (a) and Cu6PS5Br (b)
crystals implanted with the fluence 1×1015 ions/cm2.
a b
Fig. 5. Dependences of the absolute (1) and relative (2) values of contribution of static structural disordering into the Urbach
energy on the fluence for implanted CuUE 6PS5I (a) and Cu6PS5Br (b) crystals.
a b
Fig. 6. Luminescence spectra of unimplanted and implanted Cu6PS5I (a) and Cu6PS5Br (b) crystals at T = 77 K and various
fluences: (1) unimplanted crystal, (2) 1×1012, (3) 1×1014 ions/cm2.
where and are contributions of
temperature-related and structural disordering to ,
respectively; ( and are contributions
of static structural disordering and dynamic structural
disordering to , respectively. The static structural
disordering in Cu
TUE )( XUE )(
UE
statXUE ,) dynXUE ,)(
XUE )(
statXUE ,)( 6PS5X crystal is caused by
structural imperfectness due to the high concentration of
disordered copper vacancies as well as the dynamic
structural disordering ( is related to the intense
motion of mobile copper ions, participating in ion
transport, and is responsible for the ionic conductivity
[2]. It should be noted that the first term in the right-
hand side of Eq. (4) represents static structural
dynXUE ,)
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
291
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 3. P. 287-293.
disordering, and the second one – temperature-related
types of disordering: temperature disordering due to
thermal lattice vibrations and dynamic structural
disordering due to the presence of mobile ions in
superionic conductors.
The contributions of temperature-related
disordering and static structural disordering into the
Urbach energy for the implanted CuUE 6PS5X crystals
were evaluated using the method that was developed in
Ref. [2]. Thus, for Cu6PS5I crystal the dependence of
absolute value of contribution of on the
fluence reveals its maximum at the fluence of
1×10
statXUE ,)(
12 ions/cm2 (Fig. 5a). Similarly, with increase of
fluence the relative contribution of static structural
disordering into the Urbach energy increases from
32.5% (for unimplanted crystal), achives the maximum
value of 44.3% (at the fluence 1×1012 ions/cm2), and
then decreases down to the value 34.1% (at the fluence
1×1014 ions/cm2) (Fig. 5a). The reverse situation is
observed for Cu6PS5Br crystal. It is shown that
dependences of the absolute value for
contribution as well as its relative value on the fluence
reveal their minimum at the fluence of 1×10
statXUE ,)(
13 ions/cm2
(Fig. 5b). At the fluence 1×1015 ions/cm2, the relative
value of contribution of static structural disordering into
the Urbach energy is 55.5%, while for the unimplanted
crystal is 47% (Fig. 5b).
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
In the luminescence spectrum of unimplanted
Cu6PS5I crystal, measured at the excitation by a
semiconductor laser with λ = 532 nm at T = 77 K at the
energy 1.783 eV, a wide impurity-related band is
observed, which corresponds to a “band-to-local
centre” transition (Fig. 6a). With increasing the
temperature, there is a noticeable temperature
luminescence quenching, the impurity luminescence
band broadens, decreases in its intensity and completely
smears out at 120 K. In the implanted crystals, the high-
energy shift of impurity band and its broadening are
observed (Fig. 6a). In the luminescence spectrum of the
unimplanted Cu6PS5Br crystal at T = 77 K, a wide
impurity-related band is revealed at 1.648 eV (Fig. 6b).
Implantation of Cu6PS5Br crystals with phosphorous
ions results in the band shift to the low energies and its
broadening.
4. Conclusions
Cu PS X single crystals grown by chemical vapour
transport were implanted using various fluences of 150-
keV P ions. It has been shown that the optical
absorption edge of both unimplanted and implanted
Cu PS X crystals is of exponential shape. In superionic
phase, the Urbach behaviour of the optical absorption
edge caused by exciton-phonon interaction is revealed.
6 5
+
6 5
It
has been shown that exciton-phonon interaction in both
unimplanted and implanted Cu PS X crystals6 5 is weak,
however, in implanted Cu PS I crystals 6 5 it is diminished,
while in implanted Cu PS Br crystals 6 5 it is strengthened.
Temperature dependences of the optical pseudogap and
Urbach energy, being well described in the framework
of the Einstein model, are obtained. The contributions of
static structural disordering, induced by ion
implantation, into the Urbach energy have been
evaluated. The influence of temperature and ion
implantation on luminescence spectra has been studied
as well as the mechanisms of radiative recombination in
implanted crystals have been discussed.
Aknowledgments
This work was supported by the Slovak Research and
Development Agency as well as Ministry of Education
and Science, Youth and Sport of Ukraine.
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| id | nasplib_isofts_kiev_ua-123456789-117751 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:32:36Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. 2017-05-26T15:58:46Z 2017-05-26T15:58:46Z 2011 Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 77.80.Bh, 78.40.Ha https://nasplib.isofts.kiev.ua/handle/123456789/117751 Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied. This work was supported by the Slovak Research and Development Agency as well as Ministry of Education and Science, Youth and Sport of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals Article published earlier |
| spellingShingle | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. |
| title | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_full | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_fullStr | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_full_unstemmed | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_short | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_sort | optical absorption edge and luminescence in phosphorous-implanted cu₆ps₅x (x = i, br) single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117751 |
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