Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117751 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862624708323704832 |
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| author | Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. |
| author_facet | Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. |
| citation_txt | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.
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| first_indexed | 2025-12-07T13:32:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117751 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:32:36Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. 2017-05-26T15:58:46Z 2017-05-26T15:58:46Z 2011 Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 77.80.Bh, 78.40.Ha https://nasplib.isofts.kiev.ua/handle/123456789/117751 Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied. This work was supported by the Slovak Research and Development Agency as well as Ministry of Education and Science, Youth and Sport of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals Article published earlier |
| spellingShingle | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. |
| title | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_full | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_fullStr | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_full_unstemmed | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_short | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals |
| title_sort | optical absorption edge and luminescence in phosphorous-implanted cu₆ps₅x (x = i, br) single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117751 |
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