Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2011 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117751 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. |