Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals

Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals

Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispers...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2011
Main Authors: Studenyak, I.P., Izai, V.Yu., Stephanovich, V.О., Panko, V.V., Kúš, P., Plecenik, A., Zahoran, M., Greguš, J., Roch, T.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117753
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117753
record_format dspace
spelling Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
2017-05-26T16:00:14Z
2017-05-26T16:00:14Z
2011
Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS 77.80.Bh, 78.40.Ha
https://nasplib.isofts.kiev.ua/handle/123456789/117753
Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.
This work was supported by the Slovak Research and Development Agency as well as Ministry of Education and Science, Youth and Sport of Ukraine.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
spellingShingle Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
title_short Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_full Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_fullStr Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_full_unstemmed Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_sort optical absorption edge and luminescence in phosphorous-implanted cu₆ps₅x (x = i, br) single crystals
author Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
author_facet Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117753
citation_txt Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.
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first_indexed 2025-12-02T10:51:32Z
last_indexed 2025-12-02T10:51:32Z
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