Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure
Impurity states in Si/SiO₂ structure have been studied using
 cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2
 are sensitive to the action of magnetic field, which can be revealed due to changes in
 Si/SiO₂ optical properties. The mos...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117754 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862544172617039872 |
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| author | Steblenko, L.P. Koplak, O.V. Syvorotka, I.I. Kravchenko, V.S. |
| author_facet | Steblenko, L.P. Koplak, O.V. Syvorotka, I.I. Kravchenko, V.S. |
| citation_txt | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Impurity states in Si/SiO₂ structure have been studied using
cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2
are sensitive to the action of magnetic field, which can be revealed due to changes in
Si/SiO₂ optical properties. The most sensitive to magnetic field (about 35 per cent) is the
intensity of the 1.9 eV CL band attributed to non-bridge oxygen atoms.
|
| first_indexed | 2025-11-25T01:19:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117754 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T01:19:11Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Steblenko, L.P. Koplak, O.V. Syvorotka, I.I. Kravchenko, V.S. 2017-05-26T16:01:06Z 2017-05-26T16:01:06Z 2011 Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 07.57.-c, 61.43.Dq, 61.72.Dd, 68.35.Dv, 78.60.Hk, 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/117754 Impurity states in Si/SiO₂ structure have been studied using
 cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2
 are sensitive to the action of magnetic field, which can be revealed due to changes in
 Si/SiO₂ optical properties. The most sensitive to magnetic field (about 35 per cent) is the
 intensity of the 1.9 eV CL band attributed to non-bridge oxygen atoms. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure Article published earlier |
| spellingShingle | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure Steblenko, L.P. Koplak, O.V. Syvorotka, I.I. Kravchenko, V.S. |
| title | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure |
| title_full | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure |
| title_fullStr | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure |
| title_full_unstemmed | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure |
| title_short | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure |
| title_sort | effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in si/sio₂ structure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117754 |
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