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Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure

Impurity states in Si/SiO₂ structure have been studied using
 cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2
 are sensitive to the action of magnetic field, which can be revealed due to changes in
 Si/SiO₂ optical properties. The mos...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
Hauptverfasser: Steblenko, L.P., Koplak, O.V., Syvorotka, I.I., Kravchenko, V.S.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117754
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ.

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