Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Vlasenko, N.A., Oleksenko, P.F., Mukhlyo, M.O., Lytvyn, P.M., Veligura, L.I., Denisova, Z.L.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117755
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ.

The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film
 structures under electrical pumping with the impact excitation mechanism was first
 discovered after improvement of some waveguide optical properties. However, lasing
 turned out to be unstable and ceases soon, which is accompanied by strong weakening
 the emission recorded from the waveguide edge whereas the emission from the structure
 face remains intensive. It is shown that the above changes stem from increasing optical
 losses caused by appearance of light scattering in the structure by inhomogeneities
 formed during lasing as a consequence the most probably of recrystallization processes in
 the Cr:ZnS film. Some ways are proposed to improve the lasing stability