Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film
 structures under electrical pumping with the impact excitation mechanism was first
 discovered after improvement of some waveguide optical properties. However, lasing
 turned out to be unstable and cea...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117755 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862651669993488384 |
|---|---|
| author | Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.O. Lytvyn, P.M. Veligura, L.I. Denisova, Z.L. |
| author_facet | Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.O. Lytvyn, P.M. Veligura, L.I. Denisova, Z.L. |
| citation_txt | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film
structures under electrical pumping with the impact excitation mechanism was first
discovered after improvement of some waveguide optical properties. However, lasing
turned out to be unstable and ceases soon, which is accompanied by strong weakening
the emission recorded from the waveguide edge whereas the emission from the structure
face remains intensive. It is shown that the above changes stem from increasing optical
losses caused by appearance of light scattering in the structure by inhomogeneities
formed during lasing as a consequence the most probably of recrystallization processes in
the Cr:ZnS film. Some ways are proposed to improve the lasing stability
|
| first_indexed | 2025-12-01T20:34:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117755 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T20:34:03Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.O. Lytvyn, P.M. Veligura, L.I. Denisova, Z.L. 2017-05-26T16:06:51Z 2017-05-26T16:06:51Z 2011 Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.55.-f, 42.79.Gn, 68.55.Ln, 78.60.Fi https://nasplib.isofts.kiev.ua/handle/123456789/117755 The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film
 structures under electrical pumping with the impact excitation mechanism was first
 discovered after improvement of some waveguide optical properties. However, lasing
 turned out to be unstable and ceases soon, which is accompanied by strong weakening
 the emission recorded from the waveguide edge whereas the emission from the structure
 face remains intensive. It is shown that the above changes stem from increasing optical
 losses caused by appearance of light scattering in the structure by inhomogeneities
 formed during lasing as a consequence the most probably of recrystallization processes in
 the Cr:ZnS film. Some ways are proposed to improve the lasing stability en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism Article published earlier |
| spellingShingle | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.O. Lytvyn, P.M. Veligura, L.I. Denisova, Z.L. |
| title | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism |
| title_full | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism |
| title_fullStr | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism |
| title_full_unstemmed | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism |
| title_short | Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism |
| title_sort | laser oscillation in cr²⁺:zns waveguide thin-film structures under electrical pumping with impact excitation mechanism |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117755 |
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