Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117756 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862638599441219584 |
|---|---|
| author | Gaidar, G.P. |
| author_facet | Gaidar, G.P. |
| citation_txt | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with NAs ≈ 7.79×10¹³ cm⁻³ and less) the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration nc and their mobility μ.
|
| first_indexed | 2025-12-01T00:23:13Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117756 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T00:23:13Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. 2017-05-26T16:12:02Z 2017-05-26T16:12:02Z 2011 Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.80.Ed, 61.82.Fk, 72.20.-i https://nasplib.isofts.kiev.ua/handle/123456789/117756 Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with NAs ≈ 7.79×10¹³ cm⁻³ and less) the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration nc and their mobility μ. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge Article published earlier |
| spellingShingle | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge Gaidar, G.P. |
| title | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge |
| title_full | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge |
| title_fullStr | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge |
| title_full_unstemmed | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge |
| title_short | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge |
| title_sort | changes in hall parameters after γ-irradiation (⁶⁰со) of n-ge |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117756 |
| work_keys_str_mv | AT gaidargp changesinhallparametersafterγirradiation60soofnge |