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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge

Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2011
1. Verfasser:	Gaidar, G.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/117756
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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