Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges

It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
Hauptverfasser: Dobrovolskiy, Yu.G., Perevertailo, V.L., Shabashkevich, B.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117757
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges / Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 298-301. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in the maxima of their spectral characteristics. It is also shown that the film silicon nitride – silicon dioxide a bit better clarifies silicon photodiode, especially at the wavelength 700 nm. A gluing composition, in general, worsens transmission of films, and to greater extent transmission of the above film.
ISSN:1560-8034