Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges
It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117757 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges / Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 298-301. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862685475629694976 |
|---|---|
| author | Dobrovolskiy, Yu.G. Perevertailo, V.L. Shabashkevich, B.G. |
| author_facet | Dobrovolskiy, Yu.G. Perevertailo, V.L. Shabashkevich, B.G. |
| citation_txt | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges / Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 298-301. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in the maxima of their spectral characteristics. It is also shown that the film silicon nitride – silicon dioxide a bit better clarifies silicon photodiode, especially at the wavelength 700 nm. A gluing composition, in general, worsens transmission of films, and to greater extent transmission of the above film.
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| first_indexed | 2025-12-07T16:00:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117757 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:00:29Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dobrovolskiy, Yu.G. Perevertailo, V.L. Shabashkevich, B.G. 2017-05-26T16:12:46Z 2017-05-26T16:12:46Z 2011 Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges / Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 298-301. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 42.79.Wc, 78.20.Ci, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/117757 It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in the maxima of their spectral characteristics. It is also shown that the film silicon nitride – silicon dioxide a bit better clarifies silicon photodiode, especially at the wavelength 700 nm. A gluing composition, in general, worsens transmission of films, and to greater extent transmission of the above film. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges Article published earlier |
| spellingShingle | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges Dobrovolskiy, Yu.G. Perevertailo, V.L. Shabashkevich, B.G. |
| title | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges |
| title_full | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges |
| title_fullStr | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges |
| title_full_unstemmed | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges |
| title_short | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges |
| title_sort | anti-reflection coatings based on sno₂, sio₂, si₃n₄ films for photodiodes operating in ultraviolet and visible spectral ranges |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117757 |
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