Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Dobrovolskiy, Yu.G., Perevertailo, V.L., Shabashkevich, B.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117757
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges / Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 298-301. — Бібліогр.: 10 назв. — англ.

It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in...