Formation of silicon nanoclusters in buried ultra-thin oxide layers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117760
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.

The peculiarities of buried layer formation obtained by co-implantation of O2
 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV
 have been investigated. The corresponding ion doses for carbon and oxygen ions were
 equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer.