Formation of silicon nanoclusters in buried ultra-thin oxide layers

Formation of silicon nanoclusters in buried ultra-thin oxide layers

The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², resp...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
Hauptverfasser: Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117760
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117760
record_format dspace
spelling Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
2017-05-26T16:17:26Z
2017-05-26T16:17:26Z
2011
Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 61.10.Nz, 61.72.Tt, 79.60.Jv, 78.55.-m
https://nasplib.isofts.kiev.ua/handle/123456789/117760
The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer.
Financial support by the Ministry of Education and Science of Ukraine (Grant М/90-2010) is gratefully acknowledged. Many thanks for the long and very useful scientific discussion to Dr. B. Romanyuk. We also acknowledge the ion implantation group members, in particular G. Kalistyi and V. Fedulov.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Formation of silicon nanoclusters in buried ultra-thin oxide layers
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Formation of silicon nanoclusters in buried ultra-thin oxide layers
spellingShingle Formation of silicon nanoclusters in buried ultra-thin oxide layers
Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
title_short Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_full Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_fullStr Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_full_unstemmed Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_sort formation of silicon nanoclusters in buried ultra-thin oxide layers
author Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
author_facet Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117760
citation_txt Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.
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first_indexed 2025-12-07T19:08:21Z
last_indexed 2025-12-07T19:08:21Z
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