Formation of silicon nanoclusters in buried ultra-thin oxide layers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117760
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.

The peculiarities of buried layer formation obtained by co-implantation of O2
 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV
 have been investigated. The corresponding ion doses for carbon and oxygen ions were
 equal to 2 x 10¹⁶ cm⁻² an...