Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crysta...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117762 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117762 |
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Boiko, I.I. 2017-05-26T16:19:34Z 2017-05-26T16:19:34Z 2011 Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.72, 72.20 https://nasplib.isofts.kiev.ua/handle/123456789/117762 Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crystal. The drag effect considered here appears also in the form of non-monotonous dependences of conductivity on temperature and carrier concentration. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| spellingShingle |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium Boiko, I.I. |
| title_short |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_full |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_fullStr |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_full_unstemmed |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_sort |
influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| author |
Boiko, I.I. |
| author_facet |
Boiko, I.I. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Conductivity of p-Si and p-Ge is considered for the two-band model with due
regard for mutual drag of light and heavy holes. It is shown that for small and moderate
temperatures this drag significantly diminishes the drift velocity of light holes and, as a
result, the whole conductivity of crystal. The drag effect considered here appears also in
the form of non-monotonous dependences of conductivity on temperature and carrier
concentration.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117762 |
| citation_txt |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. |
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AT boikoii influenceofmutualdragoflightandheavyholesonconductivityofpsiliconandpgermanium |
| first_indexed |
2025-11-30T09:29:42Z |
| last_indexed |
2025-11-30T09:29:42Z |
| _version_ |
1850857257562013696 |