Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
Conductivity of p-Si and p-Ge is considered for the two-band model with due
 regard for mutual drag of light and heavy holes. It is shown that for small and moderate
 temperatures this drag significantly diminishes the drift velocity of light holes and, as a
 result, the whol...
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| Опубліковано в: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| ISSN: | 1560-8034 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117762 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862629712118939648 |
|---|---|
| author | Boiko, I.I. |
| author_facet | Boiko, I.I. |
| citation_txt | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Conductivity of p-Si and p-Ge is considered for the two-band model with due
regard for mutual drag of light and heavy holes. It is shown that for small and moderate
temperatures this drag significantly diminishes the drift velocity of light holes and, as a
result, the whole conductivity of crystal. The drag effect considered here appears also in
the form of non-monotonous dependences of conductivity on temperature and carrier
concentration.
|
| first_indexed | 2025-11-30T09:29:42Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117762 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T09:29:42Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boiko, I.I. 2017-05-26T16:19:34Z 2017-05-26T16:19:34Z 2011 Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.72, 72.20 https://nasplib.isofts.kiev.ua/handle/123456789/117762 Conductivity of p-Si and p-Ge is considered for the two-band model with due
 regard for mutual drag of light and heavy holes. It is shown that for small and moderate
 temperatures this drag significantly diminishes the drift velocity of light holes and, as a
 result, the whole conductivity of crystal. The drag effect considered here appears also in
 the form of non-monotonous dependences of conductivity on temperature and carrier
 concentration. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium Article published earlier |
| spellingShingle | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium Boiko, I.I. |
| title | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_full | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_fullStr | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_full_unstemmed | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_short | Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| title_sort | influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117762 |
| work_keys_str_mv | AT boikoii influenceofmutualdragoflightandheavyholesonconductivityofpsiliconandpgermanium |