Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Author: Boiko, I.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117762
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ.

Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crysta...