Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117763 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad
dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single
crystals was studied. When analyzing the experimental data it was established that after
doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the
photoconductivity value and the intensity of photoluminescence radiation increased in
the investigated samples. A defect-formation model explaining the observed
characteristics was proposed.
|
|---|---|
| ISSN: | 1560-8034 |