Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2011 |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117763 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-117763 |
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Taghiyev, T.B. 2017-05-26T16:25:53Z 2017-05-26T16:25:53Z 2011 Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.80.-x, 72.40.+w, 78.55 https://nasplib.isofts.kiev.ua/handle/123456789/117763 The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the photoconductivity value and the intensity of photoluminescence radiation increased in the investigated samples. A defect-formation model explaining the observed characteristics was proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| spellingShingle |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals Taghiyev, T.B. |
| title_short |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_full |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_fullStr |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_full_unstemmed |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_sort |
photoconductivity and photoluminescence features of γ-irradiated gas₀.₇₅se₀.₂₅‹er› single crystals |
| author |
Taghiyev, T.B. |
| author_facet |
Taghiyev, T.B. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad
dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single
crystals was studied. When analyzing the experimental data it was established that after
doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the
photoconductivity value and the intensity of photoluminescence radiation increased in
the investigated samples. A defect-formation model explaining the observed
characteristics was proposed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117763 |
| citation_txt |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. |
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2025-12-07T20:36:16Z |
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2025-12-07T20:36:16Z |
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