Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad
 dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single
 crystals was studied. When analyzing the experimental data it was established that after
 doping with the rare-eart...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117763 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862744558675165184 |
|---|---|
| author | Taghiyev, T.B. |
| author_facet | Taghiyev, T.B. |
| citation_txt | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad
dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single
crystals was studied. When analyzing the experimental data it was established that after
doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the
photoconductivity value and the intensity of photoluminescence radiation increased in
the investigated samples. A defect-formation model explaining the observed
characteristics was proposed.
|
| first_indexed | 2025-12-07T20:36:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117763 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:36:16Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Taghiyev, T.B. 2017-05-26T16:25:53Z 2017-05-26T16:25:53Z 2011 Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.80.-x, 72.40.+w, 78.55 https://nasplib.isofts.kiev.ua/handle/123456789/117763 The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad
 dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single
 crystals was studied. When analyzing the experimental data it was established that after
 doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the
 photoconductivity value and the intensity of photoluminescence radiation increased in
 the investigated samples. A defect-formation model explaining the observed
 characteristics was proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals Article published earlier |
| spellingShingle | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals Taghiyev, T.B. |
| title | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_full | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_fullStr | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_full_unstemmed | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_short | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals |
| title_sort | photoconductivity and photoluminescence features of γ-irradiated gas₀.₇₅se₀.₂₅‹er› single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117763 |
| work_keys_str_mv | AT taghiyevtb photoconductivityandphotoluminescencefeaturesofγirradiatedgas075se025ersinglecrystals |