Cover Image

Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals

The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad
 dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single
 crystals was studied. When analyzing the experimental data it was established that after
 doping with the rare-eart...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2011
Main Author: Taghiyev, T.B.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117763
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Similar Items

Similar Items