Characterization of quaternary chalcogenide As-Ge-Te-Si thin films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• ISSN: 1560-8034
• Hauptverfasser: Amer, H.H., Elkordy, M., Zien, M., Dahshan, A., Elshamy, R.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117764
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Characterization of quaternary chalcogenide
 As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ.

Investigated in this paper is the effect of replacement of Te by Si on the optical
 gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the
 thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were prepared using thermal evaporation
 of bulk samples. Increasing Si content was found to affect the average heat of
 atomization, average coordination number, number of constraints and cohesive energy of
 the As₃₀Ge₁₀Te₆₀₋xSix alloys. Optical absorption is due to allowed non-direct transition,
 and the energy gap increases with increasing Si content. The chemical bond approach has
 been applied successfully to interpret the increase in the optical gap with increasing
 silicon content.