Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were pre...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2011 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117764 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117764 |
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Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. 2017-05-26T16:28:43Z 2017-05-26T16:28:43Z 2011 Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS 61.80.-x, 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/117764 Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were prepared using thermal evaporation of bulk samples. Increasing Si content was found to affect the average heat of atomization, average coordination number, number of constraints and cohesive energy of the As₃₀Ge₁₀Te₆₀₋xSix alloys. Optical absorption is due to allowed non-direct transition, and the energy gap increases with increasing Si content. The chemical bond approach has been applied successfully to interpret the increase in the optical gap with increasing silicon content. The authors would like to thank Dr. A. Abdglel, Solid State Physics Department, National Center for Radiation Research and Technology, Atomic Energy Authority, Cairo, Egypt for his help and support. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of quaternary chalcogenide As-Ge-Te-Si thin films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| spellingShingle |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. |
| title_short |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_full |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_fullStr |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_full_unstemmed |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_sort |
characterization of quaternary chalcogenide as-ge-te-si thin films |
| author |
Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. |
| author_facet |
Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Investigated in this paper is the effect of replacement of Te by Si on the optical
gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the
thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were prepared using thermal evaporation
of bulk samples. Increasing Si content was found to affect the average heat of
atomization, average coordination number, number of constraints and cohesive energy of
the As₃₀Ge₁₀Te₆₀₋xSix alloys. Optical absorption is due to allowed non-direct transition,
and the energy gap increases with increasing Si content. The chemical bond approach has
been applied successfully to interpret the increase in the optical gap with increasing
silicon content.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117764 |
| citation_txt |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ. |
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AT amerhh characterizationofquaternarychalcogenideasgetesithinfilms AT elkordym characterizationofquaternarychalcogenideasgetesithinfilms AT zienm characterizationofquaternarychalcogenideasgetesithinfilms AT dahshana characterizationofquaternarychalcogenideasgetesithinfilms AT elshamyra characterizationofquaternarychalcogenideasgetesithinfilms |
| first_indexed |
2025-11-30T23:47:46Z |
| last_indexed |
2025-11-30T23:47:46Z |
| _version_ |
1850858779752529920 |