Characterization of quaternary chalcogenide As-Ge-Te-Si thin films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Amer, H.H., Elkordy, M., Zien, M., Dahshan, A., Elshamy, R.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117764
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ.

Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were pre...