Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Gudenko1, Yu.M., Vainberg, V.V., Poroshin, V.M., Tulupenko, V.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117768
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ.

The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong
 lateral electric fields and conditions of carrier generation by the band-to-band light
 absorption has been investigated experimentally. The data of the drift length, drift
 mobility, and lif...