Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon aniso...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2007 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117772 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117772 |
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dspace |
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Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. 2017-05-26T17:21:29Z 2017-05-26T17:21:29Z 2007 Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.70.L, 42.40.Ht, 78.20.e https://nasplib.isofts.kiev.ua/handle/123456789/117772 Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon anisotropic etching was optimized, too. This technology has been used for the fabrication of high-quality diffraction gratings on Si (100) surface with symmetric triangular and trapezium grooves and two-dimentional periodic structures. Relief parameters and diffraction properties of the obtained structures and their dependences on etching time were determined en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| spellingShingle |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| title_short |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_full |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_fullStr |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_full_unstemmed |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_sort |
fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| author |
Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| author_facet |
Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Application of inorganic photoresist based on chalcogenide films for
fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
a silicon surface was developed, and silicon anisotropic etching was optimized, too. This
technology has been used for the fabrication of high-quality diffraction gratings on Si
(100) surface with symmetric triangular and trapezium grooves and two-dimentional
periodic structures. Relief parameters and diffraction properties of the obtained structures
and their dependences on etching time were determined
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117772 |
| fulltext |
|
| citation_txt |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-11-24T10:13:24Z |
| last_indexed |
2025-11-24T10:13:24Z |
| _version_ |
1850844665404719104 |