Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
Application of inorganic photoresist based on chalcogenide films for
 fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
 purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
 a silicon surface was deve...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117772 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862535523270131712 |
|---|---|
| author | Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| author_facet | Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| citation_txt | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Application of inorganic photoresist based on chalcogenide films for
fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
a silicon surface was developed, and silicon anisotropic etching was optimized, too. This
technology has been used for the fabrication of high-quality diffraction gratings on Si
(100) surface with symmetric triangular and trapezium grooves and two-dimentional
periodic structures. Relief parameters and diffraction properties of the obtained structures
and their dependences on etching time were determined
|
| first_indexed | 2025-11-24T10:13:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117772 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T10:13:24Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. 2017-05-26T17:21:29Z 2017-05-26T17:21:29Z 2007 Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.70.L, 42.40.Ht, 78.20.e https://nasplib.isofts.kiev.ua/handle/123456789/117772 Application of inorganic photoresist based on chalcogenide films for
 fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
 purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
 a silicon surface was developed, and silicon anisotropic etching was optimized, too. This
 technology has been used for the fabrication of high-quality diffraction gratings on Si
 (100) surface with symmetric triangular and trapezium grooves and two-dimentional
 periodic structures. Relief parameters and diffraction properties of the obtained structures
 and their dependences on etching time were determined en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist Article published earlier |
| spellingShingle | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| title | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_full | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_fullStr | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_full_unstemmed | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_short | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_sort | fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117772 |
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