Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117772
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ.

Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon aniso...