Polarization analysis of birefringence in uniaxially deformed silicon crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Berezhinsky, L.I., Berezhinsky, I.L., Pipa, V.I., Matyash, I.Ye., Serdega, B.K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117773
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ.

The birefringence induced by uniaxial compression in low-doped silicon
 crystals was investigated both theoretically and experimentally. The circular components
 of the Stokes vector in the transmission and reflectance radiation are measured as a
 function of external pressure by using the method based on the modulation of radiation
 polarization. The value of the Brewster constant was obtained for absorption (λ =
 0.63 µm) and transparence (λ = 1.15 µm) regions. The obtained experimental data are in
 a good agreement with calculation results based on the anisotropy model of dielectric
 properties within the framework of the Hook law. Shown is the practical importance of
 the polarization analysis in researching anisotropy of dielectric properties of materials.