Polarization analysis of birefringence in uniaxially deformed silicon crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Berezhinsky, L.I., Berezhinsky, I.L., Pipa, V.I., Matyash, I.Ye., Serdega, B.K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117773
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ.

The birefringence induced by uniaxial compression in low-doped silicon
 crystals was investigated both theoretically and experimentally. The circular components
 of the Stokes vector in the transmission and reflectance radiation are measured as a
 function of external pressur...