The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties

• Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• ISSN: 1560-8034
• Автори: Horvat, G.T., Kondratenko, O.S., Loja, V.Ju., Myholynets, I.M., Rosola, I.J., Jurkovуch, N.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117775
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ.

The mechanisms of formation of modified thin-film structures based on GeSe(S)
 systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have
 been determined. The process of their growth and the structure is greatly influenced by
 the vapor composition, energetic state of its particles, the velocity of condensation, the
 temperature of the lining and that of evaporator. The 〈Ge₀.₄S₀.₆:Х〉 (Bi,Pb,In),
 〈Ge₀.₄S₀.₆:In〉 structure is characterized by the mechanism of condensation which is
 realized according to the type: vapor-liquid-solid phase with coalescence. The
 condensation mechanism in 〈Ge₀.₄S₀.₆:Al(Te)〉 structures is realized according to the type
 vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %),
 In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge₀.₄S₀.₆:Те〉 (Те is 30.7 аt. %)
 structure reaches ~37 nm. The thickness and optical parameters of modified thin-film
 structures have been determined using the method of multiangular ellipsometry.