The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
The mechanisms of formation of modified thin-film structures based on GeSe(S)
 systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have
 been determined. The process of their growth and the structure is greatly influenced by
 the vapor composition, energe...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117775 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862535109663522816 |
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| author | Horvat, G.T. Kondratenko, O.S. Loja, V.Ju. Myholynets, I.M. Rosola, I.J. Jurkovуch, N.V. |
| author_facet | Horvat, G.T. Kondratenko, O.S. Loja, V.Ju. Myholynets, I.M. Rosola, I.J. Jurkovуch, N.V. |
| citation_txt | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The mechanisms of formation of modified thin-film structures based on GeSe(S)
systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have
been determined. The process of their growth and the structure is greatly influenced by
the vapor composition, energetic state of its particles, the velocity of condensation, the
temperature of the lining and that of evaporator. The 〈Ge₀.₄S₀.₆:Х〉 (Bi,Pb,In),
〈Ge₀.₄S₀.₆:In〉 structure is characterized by the mechanism of condensation which is
realized according to the type: vapor-liquid-solid phase with coalescence. The
condensation mechanism in 〈Ge₀.₄S₀.₆:Al(Te)〉 structures is realized according to the type
vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %),
In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge₀.₄S₀.₆:Те〉 (Те is 30.7 аt. %)
structure reaches ~37 nm. The thickness and optical parameters of modified thin-film
structures have been determined using the method of multiangular ellipsometry.
|
| first_indexed | 2025-11-24T09:08:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117775 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T09:08:24Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Horvat, G.T. Kondratenko, O.S. Loja, V.Ju. Myholynets, I.M. Rosola, I.J. Jurkovуch, N.V. 2017-05-26T17:24:51Z 2017-05-26T17:24:51Z 2007 The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/117775 The mechanisms of formation of modified thin-film structures based on GeSe(S)
 systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have
 been determined. The process of their growth and the structure is greatly influenced by
 the vapor composition, energetic state of its particles, the velocity of condensation, the
 temperature of the lining and that of evaporator. The 〈Ge₀.₄S₀.₆:Х〉 (Bi,Pb,In),
 〈Ge₀.₄S₀.₆:In〉 structure is characterized by the mechanism of condensation which is
 realized according to the type: vapor-liquid-solid phase with coalescence. The
 condensation mechanism in 〈Ge₀.₄S₀.₆:Al(Te)〉 structures is realized according to the type
 vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %),
 In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge₀.₄S₀.₆:Те〉 (Те is 30.7 аt. %)
 structure reaches ~37 nm. The thickness and optical parameters of modified thin-film
 structures have been determined using the method of multiangular ellipsometry. The authors express their sincere gratitude to O.S. Lytvyn for her assistance in investigations of the structures by using AFM en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties Article published earlier |
| spellingShingle | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties Horvat, G.T. Kondratenko, O.S. Loja, V.Ju. Myholynets, I.M. Rosola, I.J. Jurkovуch, N.V. |
| title | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties |
| title_full | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties |
| title_fullStr | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties |
| title_full_unstemmed | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties |
| title_short | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties |
| title_sort | formation mechanism of modified thin-film structures based on ge-se(s) systems and its influence on physical properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117775 |
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