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The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties

The mechanisms of formation of modified thin-film structures based on GeSe(S)
 systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have
 been determined. The process of their growth and the structure is greatly influenced by
 the vapor composition, energe...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2007
Hauptverfasser: Horvat, G.T., Kondratenko, O.S., Loja, V.Ju., Myholynets, I.M., Rosola, I.J., Jurkovуch, N.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117775
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ.

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