Graded refraction index antireflection coatings based on silicon and titanium oxides

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Author: Abdelhakim Mahdjoub
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117776
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.

Thin films with a graded refraction index constituted from silicon and titanium
 oxides were deposited by plasma enhanced chemical vapor deposition using electron
 cyclotron resonance. A plasma of oxygen reacted with two precursors: the
 tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic
 regulation of the precursor flows makes it possible to modify the chemical composition,
 and consequently the optical index, through the deposited films. To control the thickness,
 the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was
 adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end
 of each deposition allow to determine a refraction index profile and optical properties of
 the inhomogeneous deposited films. Measurements of reflectivity carried out in the
 ultraviolet-visible-near infrared range show that these films could be used as
 antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between
 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained.