Graded refraction index antireflection coatings based on silicon and titanium oxides

Thin films with a graded refraction index constituted from silicon and titanium
 oxides were deposited by plasma enhanced chemical vapor deposition using electron
 cyclotron resonance. A plasma of oxygen reacted with two precursors: the
 tetraethoxysilane (TEOS) and the titan...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2007
1. Verfasser: Abdelhakim Mahdjoub
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117776
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Zitieren:Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Abdelhakim Mahdjoub
author_facet Abdelhakim Mahdjoub
citation_txt Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Thin films with a graded refraction index constituted from silicon and titanium
 oxides were deposited by plasma enhanced chemical vapor deposition using electron
 cyclotron resonance. A plasma of oxygen reacted with two precursors: the
 tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic
 regulation of the precursor flows makes it possible to modify the chemical composition,
 and consequently the optical index, through the deposited films. To control the thickness,
 the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was
 adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end
 of each deposition allow to determine a refraction index profile and optical properties of
 the inhomogeneous deposited films. Measurements of reflectivity carried out in the
 ultraviolet-visible-near infrared range show that these films could be used as
 antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between
 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained.
first_indexed 2025-12-07T18:28:11Z
format Article
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id nasplib_isofts_kiev_ua-123456789-117776
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T18:28:11Z
publishDate 2007
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Abdelhakim Mahdjoub
2017-05-26T17:25:34Z
2017-05-26T17:25:34Z
2007
Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.
1560-8034
PACS 42.79.Wc, 81.15.-z
https://nasplib.isofts.kiev.ua/handle/123456789/117776
Thin films with a graded refraction index constituted from silicon and titanium
 oxides were deposited by plasma enhanced chemical vapor deposition using electron
 cyclotron resonance. A plasma of oxygen reacted with two precursors: the
 tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic
 regulation of the precursor flows makes it possible to modify the chemical composition,
 and consequently the optical index, through the deposited films. To control the thickness,
 the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was
 adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end
 of each deposition allow to determine a refraction index profile and optical properties of
 the inhomogeneous deposited films. Measurements of reflectivity carried out in the
 ultraviolet-visible-near infrared range show that these films could be used as
 antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between
 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained.
We would like to thank the research group of Professor J. Joseph of ECLyon, especially A.S. Callard and A. Gagnaire, for their assistance in accomplishing this work. We also would like to thank R. Dubend and B. Devif for technical support.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Graded refraction index antireflection coatings based on silicon and titanium oxides
Article
published earlier
spellingShingle Graded refraction index antireflection coatings based on silicon and titanium oxides
Abdelhakim Mahdjoub
title Graded refraction index antireflection coatings based on silicon and titanium oxides
title_full Graded refraction index antireflection coatings based on silicon and titanium oxides
title_fullStr Graded refraction index antireflection coatings based on silicon and titanium oxides
title_full_unstemmed Graded refraction index antireflection coatings based on silicon and titanium oxides
title_short Graded refraction index antireflection coatings based on silicon and titanium oxides
title_sort graded refraction index antireflection coatings based on silicon and titanium oxides
url https://nasplib.isofts.kiev.ua/handle/123456789/117776
work_keys_str_mv AT abdelhakimmahdjoub gradedrefractionindexantireflectioncoatingsbasedonsiliconandtitaniumoxides