Graded refraction index antireflection coatings based on silicon and titanium oxides

Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two precursors: the tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT)....

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2007
Автор: Abdelhakim Mahdjoub
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117776
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117776
record_format dspace
spelling Abdelhakim Mahdjoub
2017-05-26T17:25:34Z
2017-05-26T17:25:34Z
2007
Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.
1560-8034
PACS 42.79.Wc, 81.15.-z
https://nasplib.isofts.kiev.ua/handle/123456789/117776
Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two precursors: the tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic regulation of the precursor flows makes it possible to modify the chemical composition, and consequently the optical index, through the deposited films. To control the thickness, the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end of each deposition allow to determine a refraction index profile and optical properties of the inhomogeneous deposited films. Measurements of reflectivity carried out in the ultraviolet-visible-near infrared range show that these films could be used as antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained.
We would like to thank the research group of Professor J. Joseph of ECLyon, especially A.S. Callard and A. Gagnaire, for their assistance in accomplishing this work. We also would like to thank R. Dubend and B. Devif for technical support.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Graded refraction index antireflection coatings based on silicon and titanium oxides
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Graded refraction index antireflection coatings based on silicon and titanium oxides
spellingShingle Graded refraction index antireflection coatings based on silicon and titanium oxides
Abdelhakim Mahdjoub
title_short Graded refraction index antireflection coatings based on silicon and titanium oxides
title_full Graded refraction index antireflection coatings based on silicon and titanium oxides
title_fullStr Graded refraction index antireflection coatings based on silicon and titanium oxides
title_full_unstemmed Graded refraction index antireflection coatings based on silicon and titanium oxides
title_sort graded refraction index antireflection coatings based on silicon and titanium oxides
author Abdelhakim Mahdjoub
author_facet Abdelhakim Mahdjoub
publishDate 2007
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two precursors: the tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic regulation of the precursor flows makes it possible to modify the chemical composition, and consequently the optical index, through the deposited films. To control the thickness, the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end of each deposition allow to determine a refraction index profile and optical properties of the inhomogeneous deposited films. Measurements of reflectivity carried out in the ultraviolet-visible-near infrared range show that these films could be used as antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117776
citation_txt Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ.
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