Graded refraction index antireflection coatings based on silicon and titanium oxides
Thin films with a graded refraction index constituted from silicon and titanium
 oxides were deposited by plasma enhanced chemical vapor deposition using electron
 cyclotron resonance. A plasma of oxygen reacted with two precursors: the
 tetraethoxysilane (TEOS) and the titan...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2007 |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117776 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862720855713251328 |
|---|---|
| author | Abdelhakim Mahdjoub |
| author_facet | Abdelhakim Mahdjoub |
| citation_txt | Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Thin films with a graded refraction index constituted from silicon and titanium
oxides were deposited by plasma enhanced chemical vapor deposition using electron
cyclotron resonance. A plasma of oxygen reacted with two precursors: the
tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic
regulation of the precursor flows makes it possible to modify the chemical composition,
and consequently the optical index, through the deposited films. To control the thickness,
the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was
adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end
of each deposition allow to determine a refraction index profile and optical properties of
the inhomogeneous deposited films. Measurements of reflectivity carried out in the
ultraviolet-visible-near infrared range show that these films could be used as
antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between
300 and 1100 nm and 48 % improvement of the photo-generated current were obtained.
|
| first_indexed | 2025-12-07T18:28:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117776 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:28:11Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Abdelhakim Mahdjoub 2017-05-26T17:25:34Z 2017-05-26T17:25:34Z 2007 Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS 42.79.Wc, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/117776 Thin films with a graded refraction index constituted from silicon and titanium
 oxides were deposited by plasma enhanced chemical vapor deposition using electron
 cyclotron resonance. A plasma of oxygen reacted with two precursors: the
 tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic
 regulation of the precursor flows makes it possible to modify the chemical composition,
 and consequently the optical index, through the deposited films. To control the thickness,
 the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was
 adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end
 of each deposition allow to determine a refraction index profile and optical properties of
 the inhomogeneous deposited films. Measurements of reflectivity carried out in the
 ultraviolet-visible-near infrared range show that these films could be used as
 antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between
 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained. We would like to thank the research group of Professor J. Joseph of ECLyon, especially A.S. Callard and A. Gagnaire, for their assistance in accomplishing this work. We also would like to thank R. Dubend and B. Devif for technical support. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Graded refraction index antireflection coatings based on silicon and titanium oxides Article published earlier |
| spellingShingle | Graded refraction index antireflection coatings based on silicon and titanium oxides Abdelhakim Mahdjoub |
| title | Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_full | Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_fullStr | Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_full_unstemmed | Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_short | Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_sort | graded refraction index antireflection coatings based on silicon and titanium oxides |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117776 |
| work_keys_str_mv | AT abdelhakimmahdjoub gradedrefractionindexantireflectioncoatingsbasedonsiliconandtitaniumoxides |