Seebeck’s effect in p-SiGe whisker samples
p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical
 precipitation from the vapor phase, have been investigated. Temperature dependences of
 the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been
 measured. It has been shown tha...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117783 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Seebeck’s effect in p-SiGe whisker samples / A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 456-460 — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862615217047863296 |
|---|---|
| author | Dolgolenko, A.P. Druzhinin, A.A. Karpenko, A.Ya. Nichkalo, S.I. Ostrovsky, I.P. Litovchenko, P.G. Litovchenko, A.P. |
| author_facet | Dolgolenko, A.P. Druzhinin, A.A. Karpenko, A.Ya. Nichkalo, S.I. Ostrovsky, I.P. Litovchenko, P.G. Litovchenko, A.P. |
| citation_txt | Seebeck’s effect in p-SiGe whisker samples / A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 456-460 — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical
precipitation from the vapor phase, have been investigated. Temperature dependences of
the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been
measured. It has been shown that the mobility of holes in p - SiGe whiskers upon the
average is 1.5 times higher than that in bulk p - Si samples. p - SiGe whiskers possess
smaller phonon scattering and larger phonon dragging in comparison with the bulk
p - Si samples.
|
| first_indexed | 2025-11-29T13:13:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117783 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T13:13:15Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dolgolenko, A.P. Druzhinin, A.A. Karpenko, A.Ya. Nichkalo, S.I. Ostrovsky, I.P. Litovchenko, P.G. Litovchenko, A.P. 2017-05-26T17:34:32Z 2017-05-26T17:34:32Z 2011 Seebeck’s effect in p-SiGe whisker samples / A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 456-460 — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 72.15.Jf, 72.20.Pa https://nasplib.isofts.kiev.ua/handle/123456789/117783 p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical
 precipitation from the vapor phase, have been investigated. Temperature dependences of
 the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been
 measured. It has been shown that the mobility of holes in p - SiGe whiskers upon the
 average is 1.5 times higher than that in bulk p - Si samples. p - SiGe whiskers possess
 smaller phonon scattering and larger phonon dragging in comparison with the bulk
 p - Si samples. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Seebeck’s effect in p-SiGe whisker samples Article published earlier |
| spellingShingle | Seebeck’s effect in p-SiGe whisker samples Dolgolenko, A.P. Druzhinin, A.A. Karpenko, A.Ya. Nichkalo, S.I. Ostrovsky, I.P. Litovchenko, P.G. Litovchenko, A.P. |
| title | Seebeck’s effect in p-SiGe whisker samples |
| title_full | Seebeck’s effect in p-SiGe whisker samples |
| title_fullStr | Seebeck’s effect in p-SiGe whisker samples |
| title_full_unstemmed | Seebeck’s effect in p-SiGe whisker samples |
| title_short | Seebeck’s effect in p-SiGe whisker samples |
| title_sort | seebeck’s effect in p-sige whisker samples |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117783 |
| work_keys_str_mv | AT dolgolenkoap seebeckseffectinpsigewhiskersamples AT druzhininaa seebeckseffectinpsigewhiskersamples AT karpenkoaya seebeckseffectinpsigewhiskersamples AT nichkalosi seebeckseffectinpsigewhiskersamples AT ostrovskyip seebeckseffectinpsigewhiskersamples AT litovchenkopg seebeckseffectinpsigewhiskersamples AT litovchenkoap seebeckseffectinpsigewhiskersamples |