On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
We present both theoretical and experimental temperature dependences of
 contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺
 -n-structures whose n⁺
 -layer
 was formed using phosphorus diffusion or ion implantation. The ρс(Т) dependence was
 measur...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | , , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117786 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.A. Pilipenko, T.V. Petlitskaya, V.M. Anischik, R.V. Konakova, T.V. Korostinskaya, V.P. Kostylyov, Ya.Ya. Kudryk, V.G. Lyapin, P.N. Romanets, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 1-6. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862723013219188736 |
|---|---|
| author | Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Vinogradov, A.O. Pilipenko, V.A. Petlitskaya, T.V. Anischik, V.M. Konakova, R.V. Korostinskaya, T.V. Kostylyov, V.P. Kudryk, Ya.Ya. Lyapin, V.G. Romanets, P.N. Sheremet, V.N. |
| author_facet | Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Vinogradov, A.O. Pilipenko, V.A. Petlitskaya, T.V. Anischik, V.M. Konakova, R.V. Korostinskaya, T.V. Kostylyov, V.P. Kudryk, Ya.Ya. Lyapin, V.G. Romanets, P.N. Sheremet, V.N. |
| citation_txt | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.A. Pilipenko, T.V. Petlitskaya, V.M. Anischik, R.V. Konakova, T.V. Korostinskaya, V.P. Kostylyov, Ya.Ya. Kudryk, V.G. Lyapin, P.N. Romanets, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 1-6. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We present both theoretical and experimental temperature dependences of
contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺
-n-structures whose n⁺
-layer
was formed using phosphorus diffusion or ion implantation. The ρс(Т) dependence was
measured in the 125–375 K temperature range with the transmission line method, with
allowance made for conduction in both the n⁺
-layer and n⁺
-n doping step.
|
| first_indexed | 2025-12-07T18:38:58Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117786 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:38:58Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Vinogradov, A.O. Pilipenko, V.A. Petlitskaya, T.V. Anischik, V.M. Konakova, R.V. Korostinskaya, T.V. Kostylyov, V.P. Kudryk, Ya.Ya. Lyapin, V.G. Romanets, P.N. Sheremet, V.N. 2017-05-26T17:38:55Z 2017-05-26T17:38:55Z 2014 On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.A. Pilipenko, T.V. Petlitskaya, V.M. Anischik, R.V. Konakova, T.V. Korostinskaya, V.P. Kostylyov, Ya.Ya. Kudryk, V.G. Lyapin, P.N. Romanets, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 1-6. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 73.40.Ns, 73.40.Cg, 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/117786 We present both theoretical and experimental temperature dependences of
 contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺
 -n-structures whose n⁺
 -layer
 was formed using phosphorus diffusion or ion implantation. The ρс(Т) dependence was
 measured in the 125–375 K temperature range with the transmission line method, with
 allowance made for conduction in both the n⁺
 -layer and n⁺
 -n doping step. The work was supported by the Project №Ф54/209-
 2013 ДФФД–БРФФД–2013. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step Article published earlier |
| spellingShingle | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Vinogradov, A.O. Pilipenko, V.A. Petlitskaya, T.V. Anischik, V.M. Konakova, R.V. Korostinskaya, T.V. Kostylyov, V.P. Kudryk, Ya.Ya. Lyapin, V.G. Romanets, P.N. Sheremet, V.N. |
| title | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step |
| title_full | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step |
| title_fullStr | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step |
| title_full_unstemmed | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step |
| title_short | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step |
| title_sort | on a feature of temperature dependence of contact resistivity for ohmic contacts to n-si with an n⁺ -n doping step |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117786 |
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