Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range
A procedure of mm- and submm-wave devices simulation based on the up-todate
 simulation techniques for bulk microwave structures is proposed. We demonstrate a
 possibility of making microwave radiation sources based on IMPATT diodes and
 frequency multipliers with frequency o...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117787 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range / A.V. Zorenko, Ya.Ya. Kudryk, Yu.V. Marunenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 411-415. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A procedure of mm- and submm-wave devices simulation based on the up-todate
simulation techniques for bulk microwave structures is proposed. We demonstrate a
possibility of making microwave radiation sources based on IMPATT diodes and
frequency multipliers with frequency output of 280 GHz as well as detector sections with
Schottky barrier diodes for the 220–325 GHz and 325–400 GHz frequency ranges.
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| ISSN: | 1560-8034 |