Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content
The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40)
 crystals with p-type conduction and resistivity 10⁴– 10⁸
 Ohm⋅cm have been studied. The
 band gaps of the samples and their temperature dependences have been determined. The
 electrical con...
Збережено в:
| Опубліковано в: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2011 |
| ISSN: | 1560-8034 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117789 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content / .A. Kosyachenko, I.M. Rarenko, T. Aoki, V.M. Sklyarchuk, O.L. Maslyanchuk, N.S. Yurtsenyuk, Z.І. Zakharuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 421-426. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40)
crystals with p-type conduction and resistivity 10⁴– 10⁸
Ohm⋅cm have been studied. The
band gaps of the samples and their temperature dependences have been determined. The
electrical conductivity of this material and its temperature variation are explained in
terms of statistics for electrons and holes in semiconductor with taking into account the
compensation process. The energy of ionization and degree of compensation levels
responsible for the electrical conductivity of the samples have been found.
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| ISSN: | 1560-8034 |