Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Kosyachenko, L.A., Rarenko, I.M., Aoki, T., Sklyarchuk, V.M., Maslyanchuk, O.L., Yurtsenyuk, N.S., Zakharuk, Z.І.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117789
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content / .A. Kosyachenko, I.M. Rarenko, T. Aoki, V.M. Sklyarchuk, O.L. Maslyanchuk, N.S. Yurtsenyuk, Z.І. Zakharuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 421-426. — Бібліогр.: 16 назв. — англ.

The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 10⁴– 10⁸ Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and i...