3C-6H transformation in heated cubic silicon carbide 3C-SiC
Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were inves...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2011 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117791 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. |
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Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. 2017-05-26T17:41:58Z 2017-05-26T17:41:58Z 2011 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf https://nasplib.isofts.kiev.ua/handle/123456789/117791 Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were investigated. Fine structure at the energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing was described. The role of stacking faults in the process of structure transformation was investigated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics 3C-6H transformation in heated cubic silicon carbide 3C-SiC Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| spellingShingle |
3C-6H transformation in heated cubic silicon carbide 3C-SiC Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| title_short |
3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_full |
3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_fullStr |
3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_full_unstemmed |
3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_sort |
3c-6h transformation in heated cubic silicon carbide 3c-sic |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Results of the research on the photoluminescence study of the 3C-6H-SiC
phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation
and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a
polytypes joint after high temperature annealing were investigated. Fine structure at the
energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing
was described. The role of stacking faults in the process of structure transformation was
investigated.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117791 |
| citation_txt |
3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. |
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| first_indexed |
2025-12-07T15:15:52Z |
| last_indexed |
2025-12-07T15:15:52Z |
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