3C-6H transformation in heated cubic silicon carbide 3C-SiC
Results of the research on the photoluminescence study of the 3C-6H-SiC
 phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation
 and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a
 polytypes joint after high temperat...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117791 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862664954513981440 |
|---|---|
| author | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_facet | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| citation_txt | 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Results of the research on the photoluminescence study of the 3C-6H-SiC
phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation
and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a
polytypes joint after high temperature annealing were investigated. Fine structure at the
energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing
was described. The role of stacking faults in the process of structure transformation was
investigated.
|
| first_indexed | 2025-12-07T15:15:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117791 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:15:52Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. 2017-05-26T17:41:58Z 2017-05-26T17:41:58Z 2011 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf https://nasplib.isofts.kiev.ua/handle/123456789/117791 Results of the research on the photoluminescence study of the 3C-6H-SiC
 phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation
 and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a
 polytypes joint after high temperature annealing were investigated. Fine structure at the
 energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing
 was described. The role of stacking faults in the process of structure transformation was
 investigated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics 3C-6H transformation in heated cubic silicon carbide 3C-SiC Article published earlier |
| spellingShingle | 3C-6H transformation in heated cubic silicon carbide 3C-SiC Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| title | 3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_full | 3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_fullStr | 3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_full_unstemmed | 3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_short | 3C-6H transformation in heated cubic silicon carbide 3C-SiC |
| title_sort | 3c-6h transformation in heated cubic silicon carbide 3c-sic |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117791 |
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