3C-6H transformation in heated cubic silicon carbide 3C-SiC

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117791
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ.

Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were inves...