Buchumschlag

Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium

Hall-effect and magnetoresistivity of holes in silicon and germanium are
 considered with due regard for mutual drag of light and heavy band carriers. Search of
 contribution of this drag shows that this interaction has a sufficient influence on both
 effects.

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
1. Verfasser: Boiko, I.I.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117793
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Influence of mutual drag of light and heavy holes
 on magnetoresistivity and Hall-effect of p-silicon and p-germanium / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 437-440. — Бібліогр.: 10 назв. — англ.

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