Influence of small miscuts on self-ordered growth of Ge nanoislands

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2011
• Автори: Gudymenko, O.Yo., Kladko, V.P., Yefanov, O.M., Slobodian, M.V., Polischuk, Yu.S., Krasilnik, Z.F., Lobanov, D.V., Novikov, А.А.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117796
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ.

Using high-resolution X-ray diffraction (HRXRD), we have investigated
 lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses
 deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering
 degree is initiated by ordered modulation of non-uniform deformation fields. This
 modulation is induced by small (∼0.3°) misorientation of Si substrate from [001]
 direction. Finally, we show that the miscut can be the source of perfectly ordered
 nanoisland arrays in two dimensions when the growth is performed on the strained SiGe
 (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of
 buffer layer surface from [001] growth direction via increasing the Ge content.