Influence of small miscuts on self-ordered growth of Ge nanoislands

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Gudymenko, O.Yo., Kladko, V.P., Yefanov, O.M., Slobodian, M.V., Polischuk, Yu.S., Krasilnik, Z.F., Lobanov, D.V., Novikov, А.А.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117796
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ.

Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform...