Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
Some aspects of measuring the thermal resistance to a constant heat flow at a
 p-n junction–package region in IMPATT and light-emitting diodes are considered. We
 propose a method of studying the thermal resistance of high-power light-emitting diodes.
 This method makes it po...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117797 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862688930529280000 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sorokin, V.M. Sheremet, V.N. Shynkarenko, V.V. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sorokin, V.M. Sheremet, V.N. Shynkarenko, V.V. |
| citation_txt | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Some aspects of measuring the thermal resistance to a constant heat flow at a
p-n junction–package region in IMPATT and light-emitting diodes are considered. We
propose a method of studying the thermal resistance of high-power light-emitting diodes.
This method makes it possible to increase accuracy of measuring the thermal resistance
by determining the temperature at a linear section of the voltage−temperature curve. A
possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V
curves is shown. This enables one to simplify calculations and increase accuracy of
measuring the thermal resistance.
|
| first_indexed | 2025-12-07T16:09:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117797 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:09:52Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sorokin, V.M. Sheremet, V.N. Shynkarenko, V.V. 2017-05-26T17:46:22Z 2017-05-26T17:46:22Z 2011 Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 07.20.-n, 85.30.Kk, 85.60.Jb https://nasplib.isofts.kiev.ua/handle/123456789/117797 Some aspects of measuring the thermal resistance to a constant heat flow at a
 p-n junction–package region in IMPATT and light-emitting diodes are considered. We
 propose a method of studying the thermal resistance of high-power light-emitting diodes.
 This method makes it possible to increase accuracy of measuring the thermal resistance
 by determining the temperature at a linear section of the voltage−temperature curve. A
 possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V
 curves is shown. This enables one to simplify calculations and increase accuracy of
 measuring the thermal resistance. This work is the part of the project “Development and
 fabrication of a diagnostic complex for testing of
 microwave diodes based on wide-gap semiconductors
 (2008-2012)” and project No 31/4.2.3.1/1833
 “Development of methods of investigation of contact
 systems for high-power light-emitting diodes using III
 group trinitride heterostructures”. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes Article published earlier |
| spellingShingle | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sorokin, V.M. Sheremet, V.N. Shynkarenko, V.V. |
| title | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes |
| title_full | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes |
| title_fullStr | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes |
| title_full_unstemmed | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes |
| title_short | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes |
| title_sort | some aspects of thermal resistance measurement technique for impatt and light-emitting diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117797 |
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