Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accur...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2011
Автори: Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117797
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117797
record_format dspace
spelling Belyaev, A.E.
Boltovets, N.S.
Konakova, R.V.
Kudryk, Ya.Ya.
Sorokin, V.M.
Sheremet, V.N.
Shynkarenko, V.V.
2017-05-26T17:46:22Z
2017-05-26T17:46:22Z
2011
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS 07.20.-n, 85.30.Kk, 85.60.Jb
https://nasplib.isofts.kiev.ua/handle/123456789/117797
Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determining the temperature at a linear section of the voltage−temperature curve. A possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V curves is shown. This enables one to simplify calculations and increase accuracy of measuring the thermal resistance.
This work is the part of the project “Development and fabrication of a diagnostic complex for testing of microwave diodes based on wide-gap semiconductors (2008-2012)” and project No 31/4.2.3.1/1833 “Development of methods of investigation of contact systems for high-power light-emitting diodes using III group trinitride heterostructures”.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
spellingShingle Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
Belyaev, A.E.
Boltovets, N.S.
Konakova, R.V.
Kudryk, Ya.Ya.
Sorokin, V.M.
Sheremet, V.N.
Shynkarenko, V.V.
title_short Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
title_full Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
title_fullStr Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
title_full_unstemmed Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
title_sort some aspects of thermal resistance measurement technique for impatt and light-emitting diodes
author Belyaev, A.E.
Boltovets, N.S.
Konakova, R.V.
Kudryk, Ya.Ya.
Sorokin, V.M.
Sheremet, V.N.
Shynkarenko, V.V.
author_facet Belyaev, A.E.
Boltovets, N.S.
Konakova, R.V.
Kudryk, Ya.Ya.
Sorokin, V.M.
Sheremet, V.N.
Shynkarenko, V.V.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determining the temperature at a linear section of the voltage−temperature curve. A possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V curves is shown. This enables one to simplify calculations and increase accuracy of measuring the thermal resistance.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117797
citation_txt Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ.
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