Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
Some aspects of measuring the thermal resistance to a constant heat flow at a
 p-n junction–package region in IMPATT and light-emitting diodes are considered. We
 propose a method of studying the thermal resistance of high-power light-emitting diodes.
 This method makes it po...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| ISSN: | 1560-8034 |
| Main Authors: | Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117797 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ. |
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