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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it po...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2011
Hauptverfasser:	Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/117797
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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