Influence of Cr doping on optical and photoluminescent properties of CdTe
Spectra of transmission and low-temperature photoluminescence of CdTe:Cr
 crystals have been investigated for concentrations of the doping impurity (Cr) from
 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional absorption bands with
 maxima at λ₁ = 1.9 μm and λ2 =...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117807 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of Cr doping on optical and photoluminescent properties of CdTe / М.I. Ilashchuk, O.A. Parfenyuk, K.S. Ulyanytskiy, V.V. Brus, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. P. 91-94 — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862568188609298432 |
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| author | Ilashchuk, М.I. Parfenyuk, O.A. Ulyanytskiy, K.S. Brus, V.V. Vakhnyak, N.D. |
| author_facet | Ilashchuk, М.I. Parfenyuk, O.A. Ulyanytskiy, K.S. Brus, V.V. Vakhnyak, N.D. |
| citation_txt | Influence of Cr doping on optical and photoluminescent properties of CdTe / М.I. Ilashchuk, O.A. Parfenyuk, K.S. Ulyanytskiy, V.V. Brus, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. P. 91-94 — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Spectra of transmission and low-temperature photoluminescence of CdTe:Cr
crystals have been investigated for concentrations of the doping impurity (Cr) from
1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional absorption bands with
maxima at λ₁ = 1.9 μm and λ2 = 7.0 μm induced by the presence of this dopant. An
additional band of radiative recombination in the vicinity of 1.22 eV is caused by
electron transitions from the conduction band to the deep donor levels Ev+(0.36-0.38) eV,
which correspond to the Cr¹⁺ defect entering to clusters. We have also observed the shift
of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice
deformation near the Cr²⁺ impurity position due to the static Jahn-Teller effect.
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| first_indexed | 2025-11-26T00:18:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117807 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T00:18:23Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ilashchuk, М.I. Parfenyuk, O.A. Ulyanytskiy, K.S. Brus, V.V. Vakhnyak, N.D. 2017-05-26T18:01:00Z 2017-05-26T18:01:00Z 2010 Influence of Cr doping on optical and photoluminescent properties of CdTe / М.I. Ilashchuk, O.A. Parfenyuk, K.S. Ulyanytskiy, V.V. Brus, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. P. 91-94 — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 71.55.Gs, 78.20.Ci, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/117807 Spectra of transmission and low-temperature photoluminescence of CdTe:Cr
 crystals have been investigated for concentrations of the doping impurity (Cr) from
 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional absorption bands with
 maxima at λ₁ = 1.9 μm and λ2 = 7.0 μm induced by the presence of this dopant. An
 additional band of radiative recombination in the vicinity of 1.22 eV is caused by
 electron transitions from the conduction band to the deep donor levels Ev+(0.36-0.38) eV,
 which correspond to the Cr¹⁺ defect entering to clusters. We have also observed the shift
 of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice
 deformation near the Cr²⁺ impurity position due to the static Jahn-Teller effect. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of Cr doping on optical and photoluminescent properties of CdTe Article published earlier |
| spellingShingle | Influence of Cr doping on optical and photoluminescent properties of CdTe Ilashchuk, М.I. Parfenyuk, O.A. Ulyanytskiy, K.S. Brus, V.V. Vakhnyak, N.D. |
| title | Influence of Cr doping on optical and photoluminescent properties of CdTe |
| title_full | Influence of Cr doping on optical and photoluminescent properties of CdTe |
| title_fullStr | Influence of Cr doping on optical and photoluminescent properties of CdTe |
| title_full_unstemmed | Influence of Cr doping on optical and photoluminescent properties of CdTe |
| title_short | Influence of Cr doping on optical and photoluminescent properties of CdTe |
| title_sort | influence of cr doping on optical and photoluminescent properties of cdte |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117807 |
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