Influence of Cr doping on optical and photoluminescent properties of CdTe
Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional absorption bands with maxima at λ₁ = 1.9 μm and λ2 = 7.0 μm induced by the pr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | Ilashchuk, М.I., Parfenyuk, O.A., Ulyanytskiy, K.S., Brus, V.V., Vakhnyak, N.D. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117807 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of Cr doping on optical and photoluminescent properties of CdTe / М.I. Ilashchuk, O.A. Parfenyuk, K.S. Ulyanytskiy, V.V. Brus, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. P. 91-94 — Бібліогр.: 13 назв. — англ. |
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