Spin-dependent current in silicon p-n junction diodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117808
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ.

We have used electrically detected spin-dependent paramagnetic resonance to
 investigate the non-equilibrium conductivity in a silicon diode. In order to create
 paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
 The dependence of relative changes in the amplitude of a signal under resonance
 conditions and the total value of current through the diode were investigated. We have
 found the presence of inversion channel on the surface of p-n junction and proposed the
 model of the influence of spin resonance on the channel conductivity. The upper value of
 the time constant inherent to the spin-dependent process was determined as
 approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in
 inversion channel has been discussed.