Spin-dependent current in silicon p-n junction diodes
We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the ampli...
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| Datum: | 2010 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117808 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ. |