Spin-dependent current in silicon p-n junction diodes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117808
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ.

We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the ampli...